The 2017 Kyoto Prize Workshops

History of the Development of Compound Semiconductor Electronic Devices and Its Future Possibilities

Takashi Mimura

/　　Semiconductor Engineer

Advanced Technology

Electronics

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Program
Laureates
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2017

11 /12 Sun

13:00 - 17:10

Place： Kyoto International Conference Center

Finished

Program

13:00

Opening Address and Introduction of Laureate	Hiroyuki Sakaki (President, Toyota Technological Institute)

13:10

Laureate’s Lecture	Takashi Mimura (the Laureate in Advanced Technology) “Invention and Early Development of the High Electron Mobility Transistor (HEMT)”

14:10

Intermission

14:20

Lecture	Takatomo Enoki (General Manager, Atsugi Center, NTT Electronics Corp.) “Evolution of Compound Semiconductor Transistors and Their Applications to Development of Large-Capacity Communications Systems”

15:00

Lecture	Keisuke Shinohara (Principal Scientist, Teledyne Scientific & Imaging, LLC) “High-Frequency GaN-based HEMT Technologies: Progress and Future”

15:40

Intermission

15:50

Lecture	Tatsuya Hirose (Senior Research Manager, Fujitsu Laboratories Ltd.) “GaN HEMT Technology for RF Power and Power Electronics Applications”

16:30

Lecture	Tsuneya Ando (Honorary Professor, Tokyo Institute of Technology) “Physics of Semiconductor Heterostructures”

17:10

Closing

Laureates

Takashi Mimura

Semiconductor Engineer

Dr. Mimura invented the High Electron Mobility Transistor (HEMT) with a new structure, in which two layered semiconductors are stacked. He revealed that HEMT has excellent high-frequency characteristics because of its high mobility nature of electrons. This invention has led to significant advancements both in information and communications technology and in physics studies of electrons confined in ultrathin conductive layers.

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date: November 12, 2017 (Sun.), 13:00 – 17:10
palce: Kyoto International Conference Center
Coordinator and Moderator: Naoki Yokoyama (Honorary Fellow, Fujitsu Laboratories Ltd.)

Organized by: Inamori Foundation
Supported by: Kyoto Prefectural Government, Kyoto City Government, NHK
With the cooperation of: IEEE EDS Japan Chapter, IEICE Electronics Society, JSPS 151 Committee on Advanced Nanodevice and Nanomaterials, The Institute of Electrical Engineers of Japan, The Japan Society of Applied Physics, The Physical Society of Japan