KYOTO PRIZE

Advanced Technology

The 2017 Kyoto Prize Workshop

“History of the Development of Compound Semiconductor Electronic Devices and Its Future Possibilities”

 Advanced Technology/Takashi Mimura

View the Flyer(Japanese)[PDF]

Application Form

Date: Sunday, November 12, 2017, 13:00-17:10
Place: Kyoto International Conference Center
Coordinator and Moderator: Naoki Yokoyama (Fujitsu Laboratories Ltd.)

Speakers

  • Naoki YokoyamaNaoki Yokoyama
  • Hiroyuki SakakiHiroyuki Sakaki
  • Takatomo EnokiTakatomo Enoki
  • Keisuke ShinoharaKeisuke Shinohara
  • Tatsuya HiroseTatsuya Hirose
  • Tsuneya AndoTsuneya Ando
Program
Opening address & Introduction of laureate: Hiroyuki Sakaki (Toyota Technological Institute)
Keynote speech: Takashi Mimura (Laureate in Advanced Technology)
"Invention and early development of the High Electron Mobility Transistor (HEMT)"
Speech: Takatomo Enoki (NTT Electronics Corporation)
“Evolution of Compound Semiconductor Transistors and Their Applications to Development of Large-capacity Communications Systems”
Speech: Keisuke Shinohara (Teledyne Scientific & Imaging)
“High-Frequency GaN-Based HEMT Technologies: Progress and Future”
Speech: Tatsuya Hirose (Fujitsu Laboratories Ltd.)
“GaN HEMT Technology for RF Power and Power Electronics Applications”
Speech: Tsuneya Ando (Tokyo Institute of Technology)
“Physics of Semiconductor Heterostructures”

Organized by Inamori Foundation
Supported by Kyoto Prefectural Government, Kyoto City Government, NHK
With the Cooperation of IEEE EDS Japan Chapter, IEICE Electronics Society, JSPS 151 committee on Advanced Nanodevice and Nanomaterials, The Institute of Electrical Engineers of Japan, The Japan Society of Applied Physics, and The Physical Society of Japan

Contact

If you have any question or comment,
please feel free to “Contact us.”
Phone: +81-75-371-7177
[Available: Weekday (Mon.-Fri.) 10AM-4PM]

“Contact us”

HOME